منابع مشابه
Ohmic contacts on sputtered a-Si : H
2014 We show that ohmic contacts can be obtained by hydrogen depletion in a-Si : H. We obtain these ohmic contacts by diffusion of hydrogen into adjacent films of pure a-Si at 190 °C or Pd at room temperature. J. Phrsigcue LETTRES 41 (19RO) L-27 L-29 15 JANVIER 1980, Classification Physics Abstracts 73.40N Following the work of the Dundee [1] and R.C.A. [2] groups, several laboratories have tri...
متن کاملNanoscale Mo Ohmic Contacts to III–V Fins
A novel contact-first approach for III–V FinFETs and trigate MOSFETs is presented. In this process, the metal contact is sputtered on the as-grown semiconductor heterostructure, and the contact metal is used as a part of the fin dryetch mask. We demonstrate this technique in Mo/n+-InGaAs contact structures with fin widths in the range of 50 to 300 nm. We have measured contact resistance in the ...
متن کاملMethods for fabricating Ohmic contacts to nanowires and nanotubes
A comparison of methods to create Ohmic contacts to semiconductor nanowires NWs and carbon nanotubes CNTs is presented. A Ni/Au lift-off metallization was used to contact GaN and In2O3 NWs and CNTs using electron-beam e-beam or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal,...
متن کاملSpecific contact resistance measurements of ohmic contacts to semiconducting diamond
A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on (100) and (110) type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035-...
متن کاملSchottky-to-Ohmic crossover in carbon nanotube transistor contacts.
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal work function. Although the on-state current varies continuously, the transfer characteristics reveal a relatively abrupt crossover from Schottky to Ohmic contacts. We find that typical high-p...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 1975
ISSN: 0013-4651,1945-7111
DOI: 10.1149/1.2134234